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MRF21030LR3 Datasheet

  • MRF21030LR3

  • RF Power Field Effect Transistors

  • 579.74KB

  • 8頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF21030/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for PCN and PCS base station applications with frequencies from
2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
鈥?/div>
Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts
Output Power 鈥?3.5 Watts
Power Gain 鈥?14 dB
Efficiency 鈥?15%
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Low Gold Plating Thickness on Leads, 40碌鈥?Nominal.
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF21030LR3
MRF21030LSR3
2.2 GHz, 30 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465E - 04, STYLE 1
NI - 400
MRF21030LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF21030LSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Test Conditions
Human Body Model
Machine Model
Value
65
- 0.5, +15
83.3
0.48
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Class
2 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
2.1
Unit
擄C/W
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 10
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21030LR3 MRF21030LSR3
1

MRF21030LR3 產(chǎn)品屬性

  • RF Devices Discontinuation 28/Jun/2011

  • 250

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 2.14GHz

  • 13dB

  • 28V

  • 1µA

  • -

  • 250mA

  • 30W

  • 65V

  • NI-400

  • NI-400

  • 帶卷 (TR)

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