鈥?/div>
Designed for FM, TDMA, CDMA, and Multi鈥揅arrier Applications
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage (RBE = 100
鈩?
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCES
VCBO
VCER
VEB
IC
PD
Tstg
TJ
Symbol
R
胃JC
MRF20030
30 W, 2.0 GHz
NPN SILICON
BROADBAND
RF POWER TRANSISTOR
CASE 395D鈥?3, STYLE 1
Value
25
60
60
30
鈥?
4
125
0.71
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case (1)
(1) Thermal resistance is determined under specified RF operating condition.
Max
1.4
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
Collector鈥揃ase Breakdown Voltage
(IC = 25 mAdc, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
25
60
60
26
70
70
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
REV 1
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF20030
1
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