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MRF19045R3 Datasheet

  • MRF19045R3

  • RF POWER FIELD EFFECT TRANSISTORS

  • 327.96KB

  • 12頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19045/D
The RF MOSFET Line
RF Power Field Effect Transistors
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier
applications.
鈥?/div>
Typical CDMA Performance @ 1960 MHz, 26 Volts, I
DQ
= 550 mA
Multi鈥揷arrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power 鈥?9.5 Watts Avg.
Power Gain 鈥?14.9 dB
Efficiency 鈥?23.5%
Adjacent Channel Power 鈥?/div>
885 kHz: 鈥?0 dBc @ 30 kHz BW
IM3 鈥?鈥?7 dBc
鈥?/div>
100% Tested Under 2鈥揅arrier N鈥揅DMA
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF19045R3
MRF19045SR3
1990 MHz, 45 W, 26 V
LATERAL N鈥揅HANNEL
RF POWER MOSFETs
CASE 465E鈥?3, STYLE 1
NI鈥?00
MRF19045R3
CASE 465F鈥?3, STYLE 1
NI鈥?00S
MRF19045SR3
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
鈥?.5, +15
105
0.60
鈥?5 to +200
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
1.65
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF19045R3 MRF19045SR3
1

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