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MRF19045LR3 Datasheet

  • MRF19045LR3

  • RF Power Field Effect Transistors N-Channel Enhancement-Mode...

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  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF19045/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
鈥?/div>
Typical CDMA Performance @ 1960 MHz, 26 Volts, I
DQ
= 550 mA
Multi - carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power 鈥?9.5 Watts Avg.
Power Gain 鈥?14.9 dB
Efficiency 鈥?23.5%
Adjacent Channel Power 鈥?/div>
885 kHz: - 50 dBc @ 30 kHz BW
IM3 鈥?- 37 dBc
鈥?/div>
100% Tested Under 2 - Carrier N - CDMA
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Low Gold Plating Thickness on Leads, 40碌鈥?Nominal.
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF19045LR3
MRF19045LSR3
1990 MHz, 45 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465E - 04, STYLE 1
NI - 400
MRF19045LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF19045LSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
105
0.60
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value (1)
1.65
Unit
擄C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 6
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF19045LR3 MRF19045LSR3
1

MRF19045LR3 產(chǎn)品屬性

  • 250

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 1.93GHz

  • 14.5dB

  • 26V

  • 10µA

  • -

  • 550mA

  • 45W

  • 65V

  • NI-400

  • NI-400-240

  • 帶卷 (TR)

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