鈥?/div>
100% Tested for Load Mismatch Stress at all Phase Angles with
5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW
MRF186
1.0 GHz, 120 W, 28 V
LATERAL N鈥揅HANNEL
BROADBAND
RF POWER MOSFET
CASE 375B鈥?4, STYLE 1
NI鈥?60
ARCHIVED 2005
MAXIMUM RATINGS
(2)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (R
GS
= 1 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ T
C
= 70擄C
Derate above 70擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
T
stg
T
J
Value
65
65
鹵20
14
162.5
1.25
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
(2)
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.8
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF186
1
Archived 2005
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