鈥?/div>
100% Tested for Load Mismatch Stress at all Phase Angles
with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW
G
MRF183
MRF183S
45 W, 1.0 GHz
LATERAL N鈥揅HANNEL
BROADBAND
RF POWER MOSFETs
D
CASE 360B鈥?1, STYLE 1
(MRF183)
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1 Meg Ohm)
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 70擄C
Derate above 70擄C
Storage Temperature Range
Operating Junction Temperature
S
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
CASE 360C鈥?3, STYLE 1
(MRF183S)
Value
65
65
鹵
20
5
86
0.67
鈥?65 to +200
200
Unit
Vdc
Vdc
Vdc
Adc
W
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
1.5
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF183 MRF183S
1
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