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MRF18085ALSR3 Datasheet

  • MRF18085ALSR3

  • RF Power Field Effect Transistors

  • 8頁(yè)

  • MOTOROLA   MOTOROLA

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Freescale Semiconductor
Technical Data
MRF18085A
Rev. 4, 12/2004
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and
multicarrier amplifier applications. To be used in Class AB for PCN - PCS/
cellular radio and WLL applications. Specified for GSM - GSM EDGE
1805 - 1880 MHz.
鈥?/div>
GSM and GSM EDGE Performance, Full Frequency Band
(1805 - 1880 MHz)
Power Gain - 15 dB (Typ) @ 85 Watts CW
Efficiency - 52% (Typ) @ 85 Watts CW
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
@ f = 1805 MHz
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40碌鈥?Nominal.
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF18085AR3
MRF18085ALSR3
1800 - 1880 MHz, 85 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF18085AR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF18085ALSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +65
- 0.5, +15
273
1.56
- 65 to +150
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
(1)
0.79
Unit
擄C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
1. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2004. All rights reserved.
MRF18085AR3 MRF18085ALSR3
5-1
RF Device Data
Freescale Semiconductor

MRF18085ALSR3 產(chǎn)品屬性

  • RF Devices Discontinuation 01/Jul/2010

  • 250

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 1.88GHz

  • 15dB

  • 26V

  • 10µA

  • -

  • 800mA

  • 90W

  • 65V

  • NI-780S

  • NI-780S

  • 帶卷 (TR)

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