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MRF177 Datasheet

  • MRF177

  • N-CHANNEL BROADBAND RF POWER MOSFET

  • 9頁

  • MA-COM

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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF177/D
The RF MOSFET Line
RF Power
Field Effect Transistors
MRF177
100 W, 28 V, 400 MHz
N鈥揅HANNEL
BROADBAND
RF POWER MOSFET
N鈥揅hannel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 400 MHz
frequency range. Primarily used as a driver or output amplifier in push鈥損ull
configurations. Can be used in manual gain control, ALC and modulation
circuits.
鈥?/div>
Typical Performance at 400 MHz, 28 V:
Output Power 鈥?100 W
Gain 鈥?12 dB
Efficiency 鈥?60%
鈥?/div>
Low Thermal Resistance
鈥?/div>
Low Crss 鈥?10 pF Typ @ VDS = 28 Volts
鈥?/div>
Ruggedness Tested at Rated Output Power
鈥?/div>
Nitride Passivated Die for Enhanced Reliability
鈥?/div>
Excellent Thermal Stability; Suited for Class A
Operation
5, 8
7
6
1, 4
2
3
CASE 744A鈥?1, STYLE 2
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C (1)
Derate above 25擄C
Storage Temperature Range
Operating Temperature Range
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
65
65
鹵40
16
270
1.54
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction鈥搕o鈥揅ase
Symbol
R
胃JC
Max
0.65
Unit
擄C/W
(1) Total device dissipation rating applies only when the device is operated as an RF push鈥損ull amplifier.
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
1

MRF177 產(chǎn)品屬性

  • M/A-COM Technology Solutions

  • Dual

  • N-Channel

  • 400 MHz

  • 12 dB

  • 100 W

  • 65 V

  • 16 A

  • +/- 40 V

  • + 150 C

  • Case 744A-01

  • Tray

  • - 65 C

  • SMD/SMT

  • 270 W

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