鈥?/div>
Low C
rss
鈥?20 pF Typ @ V
DS
= 28 V
G
S
MRF175LU
MRF175LV
100 W, 28 V, 400 MHz
N鈥揅HANNEL
BROADBAND
RF POWER FETs
D
CASE 333鈥?4, STYLE 2
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
65
鹵40
13
270
1.54
鈥?5 to +150
200
Unit
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.65
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain鈥揝ource Breakdown Voltage
(V
GS
= 0, I
D
= 50 mA)
Zero Gate Voltage Drain Current
(V
DS
= 28 V, V
GS
= 0)
Gate鈥揃ody Leakage Current
(V
GS
= 20 V, V
DS
= 0)
V
(BR)DSS
I
DSS
I
GSS
65
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.5
1.0
Vdc
mAdc
碌A(chǔ)dc
(continued)
Handling and Packaging
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF175LU MRF175LV
1
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