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MRF175GU1111 Datasheet

  • MRF175GU1111

  • N-CHANNEL MOS BROADBAND RF POWER FETs

  • 10頁(yè)

  • MA-COM

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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF176GU/D
The RF MOSFET Line
RF Power
Field-Effect Transistors
N鈥揅hannel Enhancement鈥揗ode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
鈥?/div>
Electrical Performance
MRF176GU @ 50 V, 400 MHz (鈥淯鈥?Suffix)
Output Power 鈥?150 Watts
Power Gain 鈥?14 dB Typ
Efficiency 鈥?50% Typ
MRF176GV @ 50 V, 225 MHz (鈥淰鈥?Suffix)
Output Power 鈥?200 Watts
Power Gain 鈥?17 dB Typ
Efficiency 鈥?55% Typ
鈥?/div>
100% Ruggedness Tested At Rated Output Power
鈥?/div>
Low Thermal Resistance
鈥?/div>
Low C
rss
鈥?7.0 pF Typ @ V
DS
= 50 V
MRF176GU
MRF176GV
200/150 W, 50 V, 500 MHz
N鈥揅HANNEL MOS
BROADBAND
RF POWER FETs
D
G
G
S
(FLANGE)
D
CASE 375鈥?4, STYLE 2
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
125
鹵40
16
400
2.27
鈥?5 to +150
200
Unit
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.44
Unit
擄C/W
Handling and Packaging
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
ELECTRICAL CHARACTERISTICS
(T
C
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Drain鈥揝ource Breakdown Voltage
(V
GS
= 0, I
D
= 100 mA)
Zero Gate Voltage Drain Current
(V
DS
= 50 V, V
GS
= 0)
Gate鈥揃ody Leakage Current
(V
GS
= 20 V, V
DS
= 0)
NOTE:
1. Each side of device measured separately.
REV 9
V
(BR)DSS
I
DSS
I
GSS
125
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.5
1.0
Vdc
mAdc
碌A(chǔ)dc
1

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