鈥?/div>
Low Noise Figure 鈥?3.0 dB Typ at 2.0 A, 150 MHz
D
MRF174
125 W, to 200 MHz
N鈥揅HANNEL MOS
BROADBAND RF POWER
FET
G
S
CASE 211鈥?1, STYLE 2
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage
(RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
65
65
鹵
40
13
270
1.54
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.65
Unit
擄C/W
Handling and Packaging
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
1