鈥?/div>
Excellent Thermal Stability; Suited for Class A Operation
G
S
MRF173
80 W, 28 V, 175 MHz
N鈥揅HANNEL
BROADBAND
RF POWER MOSFET
D
CASE 211鈥?1, STYLE 2
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Temperature Range
Symbol
V
DSS
V
DGO
V
GS
I
D
P
D
T
stg
T
J
Value
65
65
鹵40
9.0
220
1.26
鈥?5 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.8
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain鈥揝ource Breakdown Voltage (V
DS
= 0 V, V
GS
= 0 V) I
D
= 50 mA
Zero Gate Voltage Drain Current (V
DS
= 28 V, V
GS
= 0 V)
Gate鈥揝ource Leakage Current (V
GS
= 40 V, V
DS
= 0 V)
V
(BR)DSS
I
DSS
I
GSS
65
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.0
1.0
V
mA
碌A(chǔ)
ON CHARACTERISTICS
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 50 mA)
Drain鈥揝ource On鈥揤oltage (V
DS(on)
, V
GS
= 10 V, I
D
= 3.0 A)
Forward Transconductance (V
DS
= 10 V, I
D
= 2.0 A)
V
GS(th)
V
DS(on)
g
fs
1.0
鈥?/div>
1.8
3.0
鈥?/div>
2.2
6.0
1.4
鈥?/div>
V
V
mhos
(continued)
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 10
1
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