鈥?/div>
Excellent Thermal Stability; Suited for Class A Operation
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Temperature Range
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Value
65
65
鹵40
9.0
220
1.26
鈥?5 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
G
S
D
MRF173
MRF173CQ
80 W, 28 V, 175 MHz
N鈥揅HANNEL
BROADBAND
RF POWER MOSFETs
CASE 211鈥?1, STYLE 2
(MRF173)
CASE 316鈥?1, STYLE 2
(MRF173CQ)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.8
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain鈥揝ource Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 mA
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V)
Gate鈥揝ource Leakage Current (VGS = 40 V, VDS = 0 V)
V(BR)DSS
IDSS
IGSS
65
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.0
1.0
V
mA
碌A(chǔ)
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 50 mA)
Drain鈥揝ource On鈥揤oltage (VDS(on), VGS = 10 V, ID = 3.0 A)
Forward Transconductance (VDS = 10 V, ID = 2.0 A)
VGS(th)
VDS(on)
gfs
1.0
鈥?/div>
1.8
3.0
鈥?/div>
2.2
6.0
1.4
鈥?/div>
V
V
mhos
(continued)
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF173 MRF173CQ
1
MRF173CQ 產(chǎn)品屬性
0現(xiàn)貨
在售
-
托盤(pán)
在售
MOSFET
N 通道
150MHz
13dB
28 V
9A
1.5dB
50 mA
80W
65 V
-
316-01
316-01，2 型
MRF173CQ相關(guān)型號(hào)PDF文件下載
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型號(hào)
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描述
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