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MRF171A Datasheet

  • MRF171A

  • MOSFET BROADBAND RF POWER FET

  • 225.40KB

  • 12頁

  • MA-COM

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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF171A/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N鈥揅hannel Enhancement鈥揗ode MOSFET
Designed primarily for wideband large鈥搒ignal output and driver stages from
30鈥?00 MHz.
鈥?/div>
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 45 Watts
Power Gain = 17 dB (Min)
Efficiency = 60% (Min)
鈥?/div>
Excellent Thermal Stability, Ideally Suited for Class A Operation
鈥?/div>
Facilitates Manual Gain Control, ALC and Modulation Techniques
鈥?/div>
100% Tested for Load Mismatch At All Phase Angles with 30:1 VSWR
鈥?/div>
Low Crss 鈥?8 pF @ VDS = 28 V
鈥?/div>
Gold Top Metal
Typical Data For Power Amplifier Applications in Industrial,
Commercial and Amateur Radio Equipment
鈥?/div>
Typical Performance at 30 MHz, 28 Vdc
Output Power = 30 Watts (PEP)
Power Gain = 20 dB (Typ)
Efficiency = 50% (Typ)
IMD(d3) (30 Watts PEP) 鈥?2 dB (Typ)
G
S
D
MRF171A
45 W, 150 MHz
MOSFET BROADBAND
RF POWER FET
CASE 211鈥?7, STYLE 2
MAXIMUM RATINGS
Rating
Drain鈥揋ate Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Symbol
Min
Typ
Value
65
65
鹵
20
4.5
115
0.66
鈥?65 to +150
200
Unit
Vdc
Vdc
Adc
Adc
Watts
W/擄C
擄C
擄C
Unit
擄C/W
Max
Unit
THERMAL CHARACTERISTICS
Max
1.52
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain鈥揝ource Breakdown Voltage
(ID = 50 mA, VGS = 0)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 28 V)
Gate鈥揝ource Leakage Current
(VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
65
鈥?/div>
鈥?/div>
80
鈥?/div>
鈥?/div>
鈥?/div>
1.0
1.0
Vdc
mAdc
碌A(chǔ)dc
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
1

MRF171A 產(chǎn)品屬性

  • M/A-COM Technology Solutions

  • Single

  • N-Channel

  • 30 MHz to 200 MHz

  • 19.5 dB at 150 MHz

  • 45 W

  • 65 V

  • 4.5 A

  • +/- 20 V

  • + 150 C

  • Case 211-07

  • Tray

  • - 65 C

  • SMD/SMT

  • 115 W

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