鈥?/div>
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
D
MRF166
MRF166C
20 W, 500 MHz
MOSFET
BROADBAND
RF POWER FETs
CASE 211鈥?7, STYLE 2
G
S
CASE 319鈥?7, STYLE 3
MAXIMUM RATINGS
Rating
Drain鈥揋ate Voltage
Drain鈥揋ate Voltage
(RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate Above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
65
65
鹵
40
4.0
70
0.4
鈥?65 to 150
200
Unit
Vdc
Vdc
Adc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
2.5
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF166 MRF166C
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