鈥?/div>
Low Crss 鈥?4.0 pF @ VDS = 28 Volts
Designed primarily for wideband large鈥搒ignal output and driver stages to
30 鈥?500 MHz.
MRF166W
40 W, 500 MHz
TMOS BROADBAND
RF POWER FET
CASE 412鈥?1, Style 1
1
3
5
4
FLANGE
2
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥揋ate Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
65
65
鹵
20
8.0
175
1.0
鈥?65 to +150
200
Unit
Vdc
Vdc
Adc
ADC
Watts
擄C/W
擄C
擄C
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction to Case
R
胃JC
1.0
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
1
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