鈥?/div>
Low Crss 鈥?0.8 pF Typical at VDS = 28 Volts
Designed primarily for wideband large鈥搒ignal output and driver from
30鈥?00 MHz.
MRF160
To 500 MHz, 4 W, 28 V
MOSFET BROADBAND
RF POWER FET
D
G
S
CASE 249鈥?6, STYLE 3
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥揋ate Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
Drain Current鈥揅ontinuous
Total Device Dissipation @ TC = 25擄C
Derate Above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
65
65
鹵
20
1.0
24
0.14
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
ADC
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction to Case
R
胃JC
7.2
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
1
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