鈥?/div>
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
MRF16006
6.0 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C鈥?1, STYLE 2
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector鈥揅urrent
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Symbol
V
CES
V
EBO
I
C
P
D
T
stg
Value
60
4.0
1.0
26
0.15
鈥?5 to +150
Unit
Vdc
Vdc
Adc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction to Case (1) (2)
R
胃JC
6.8
擄C/W
(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 2
1
MRF16006