鈥?/div>
Excellent Thermal Stability, Ideally Suited for Class A
Operation
Designed for wideband large鈥搒ignal amplifier and oscillator applications to
500 MHz.
MRF158
To 500 MHz, 2 W, 28 V
TMOS
BROADBAND
RF POWER FET
D
G
CASE 305A鈥?1, STYLE 2
S
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
R
胃JC
Value
65
65
鹵20
0.5
8.0
45
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Max
13.2
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
1
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