鈥?/div>
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
Designed for wideband large鈥搒ignal amplifier and oscillator applications to
500 MHz.
MRF158
2.0 W, to 500 MHz
TMOS
BROADBAND
RF POWER FET
D
G
CASE 305A鈥?1, STYLE 2
S
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
R
胃JC
Value
65
65
鹵40
0.5
8.0
45
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Max
13.2
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF158
1
next