鈥?/div>
Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
MRF1518NT1
MRF1518T1
520 MHz, 8 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ T
C
= 25擄C
(1)
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
- 0.5, +40
鹵
20
4
62.5
0.50
- 65 to +150
150
Unit
Vdc
Vdc
Adc
W
W/擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
2
Unit
擄C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1. Calculated based on the formula P
D
=
TJ 鈥?TC
R
胃JC
Rating
1
Package Peak Temperature
260
Unit
擄C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF1518NT1 MRF1518T1
1
RF Device Data
Freescale Semiconductor
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