鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector鈥揅urrent 鈥?Continuous @ TJ(max) = 150擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Symbol
Min
Typ
Value
25
60
4
15
250
1.43
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
CASE 375A鈥?1, STYLE 1
90 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
NPN Silicon
RF Power Transistor
MRF15090
THERMAL CHARACTERISTICS
Max
0.70
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 50 mAdc, RBE = 100
鈩?
V(BR)CEO
V(BR)CES
V(BR)CER
25
60
30
28
65
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鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
(continued)
This document contains information on a new product. Specifications and information herein are subject to change without notice.
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF15090
1
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