MRF141
RF FIELD-EFFECT POWER TRANSISTOR
DESCRIPTION:
The
MRF141
is a N-Channel
Enhancement-Mode MOSFET
RF Power Transistor Designed for
175 MHz 150 W Transmitter and
Amplifier Applications.
PACKAGE STYLE .500 4L FLG
.112x45擄
A
FULL R
L
S
D
脴.125 NOM.
C
B
G
E
D
G
S
F
K
MAXIMUM RATINGS
I
D
V
DSS
V
GS
P
DISS
T
J
T
STG
胃
JC
16 A
65 V
鹵40
V
300 W @ T
C
= 25 擄C
-65 擄C to +200 擄C
-65 擄C to +200 擄C
0.6 擄C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
H
I J
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.125 / 3.18
.245 / 6.22
.720 / 18.28
.125 / 3.18
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
.980 / 24.89
1.050 / 26.67
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(th)
V
DS(on)
g
fs
C
iss
C
oss
C
rss
G
ps
畏
IMD
(d3)
IMD
(d11)
蠄
V
DS
= 28 V
V
DS
= 0 V
T
C
= 25 擄C
TEST CONDITIONS
I
D
= 100 mA
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
f = 1.0 MHz
P
out
= 150 W
(PEP)
f = 175 MHz
MINIMUM
65
TYPICAL
MAXIMUM
5.0
1.0
UNITS
V
mA
碌
A
V
V
mhos
I
D
= 100 mA
I
D
= 10 A
I
D
= 5.0 A
V
DS
= 28 V
1.0
5.0
350
420
40
20
10
-30
-60
5.0
5.0
pF
dB
%
dB
dB
V
DD
= 28 V I
DQ
= 250 mA
16
40
V
DD
= 28 V I
DQ
= 250 mA P
out
= 150 W
(PEP)
f = 30 to 30.001 MHz
I
D(max)
= 5.95 A
V
DD
= 28 V I
DQ
= 250 mA
f
1
=30 to 30.001 MHz
P
out
= 150 W
(PEP)
V
SWR
= 30:1
-28
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
鈥?/div>
NORTH HOLLYWOOD, CA 91605
鈥?/div>
(818) 982-1202
鈥?/div>
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/4
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