鈥?/div>
Nitride Passivated Die for Enhanced Reliability
MRF141G
300 W, 28 V, 175 MHz
N鈥揅HANNEL
BROADBAND
RF POWER MOSFET
D
G
G
S
(FLANGE)
CASE 375鈥?4, STYLE 2
D
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
DGO
V
GS
I
D
P
D
T
stg
T
J
Value
65
65
鹵40
32
500
2.85
鈥?5 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.35
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
1
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