鈥?/div>
Facilitates Manual Gain
Control, ALC and
Modulation Techniques
MRF136Y
30 W, to 400 MHz
N鈥揅HANNEL
MOS BROADBAND
RF POWER FET
D
G
G
S
(FLANGE)
CASE 319B鈥?2, STYLE 1
D
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (R
GS
= 1.0 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
T
stg
T
J
Value
Val e
65
65
鹵40
5.0
100
0.571
鈥?5 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
1.75
Unit
擄C/W
Handling and Packaging
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
1