鈥?/div>
Excellent Thermal Stability, Ideally Suited For Class A
Operation
D
MRF134
5.0 W, to 400 MHz
N鈥揅HANNEL MOS
BROADBAND RF POWER
FET
G
S
CASE 211鈥?7, STYLE 2
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage
(R
GS
= 1.0 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
T
stg
Value
65
65
鹵40
0.9
17.5
0.1
鈥?5 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
10
Unit
擄C/W
Handling and Packaging
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
1