鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF1150MA
MRF1150MB
150 W PEAK, 960 鈥?1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Peak (1)
Total Device Dissipation @ TC = 25擄C (1) (2)
Derate above 25擄C
Storage Temperature Range
Symbol
VCBO
VEBO
IC
PD
Tstg
Value
70
4.0
12
583
3.33
鈥?65 to +150
Unit
Vdc
Vdc
Adc
Watts
W/擄C
擄C
CASE 332鈥?4, STYLE 1
(MRF1150MA)
CASE 332A鈥?3, STYLE 1
(MRF1150MB)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
R
胃JC
Max
0.3
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Collector鈥揃ase Breakdown Voltage
(IC = 50 mAdc, IE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
70
70
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
10
30
鈥?/div>
鈥?/div>
NOTES:
(continued)
1. Pulse Width = 10
碌s,
Duty Cycle = 1%.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80
碌s
Pulse on Tektronix 576 or equivalent.
REV 8
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF1150MA MRF1150MB
1
MRF1150MB 產(chǎn)品屬性
0現(xiàn)貨查看交期
50 : ￥373.96340托盤
-
托盤
在售
NPN
70V
-
-
9.8dB
150W
10 @ 5A，5V
12A
-
底座安裝
332A-03
332A-03
MRF1150MB相關(guān)型號(hào)PDF文件下載
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