鈥?/div>
Characterized with 10
碌s,
1% Duty Cycle Pulses
MRF10502
500 W (PEAK)
1025 鈥?1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 355J鈥?2, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Peak
(1)
Symbol
VCES
VCBO
VEBO
IC
PD
Tstg
TJ
Value
65
65
3.5
29
1460
8.3
鈥?65 to +200
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
Total Device Dissipation @ TC = 25擄C (1), (2)
Derate above 25擄C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
R
胃JC
Max
0.12
Unit
擄C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case
胃
JC value
measured @ 32
碌s,
2%.)
Replaces MRF10500/D
1