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MRF10500 Datasheet

  • MRF10500

  • MICROWAVE POWER TRANSISTORS

  • 4頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF10500/D
Microwave Pulse
Power Transistors
. . . designed for 1025 鈥?1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode鈥揝 transmitters.
鈥?/div>
Guaranteed Performance @ 1090 MHz
Output Power = 500 Watts Peak
Gain = 8.5 dB Min, 9.0 dB (Typ)
鈥?/div>
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
鈥?/div>
Hermetically Sealed Industry Package
鈥?/div>
Silicon Nitride Passivated
鈥?/div>
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
鈥?/div>
Internal Input and Output Matching
鈥?/div>
Characterized with 10
碌s,
1% Duty Cycle Pulses
MRF10500
MRF10501
500 W (PEAK)
1025 鈥?1150 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 355D鈥?2, STYLE 1
MRF10500
CASE 355H鈥?1, STYLE 1
MRF10501
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Peak (1)
Total Device Dissipation @ TC = 25擄C (1), (2)
Derate above 25擄C
Storage Temperature Range
Junction Temperature
Symbol
VCES
VCBO
VEBO
IC
PD
Tstg
TJ
Value
65
65
3.5
29
1460
8.3
鈥?65 to + 200
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
R
胃JC
Max
0.12
Unit
擄C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case
胃
JC value
measured @ 32
碌s,
2%.)
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF10500 MRF10501
2鈥?

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