鈥?/div>
Internal Input Matching for Broadband Operation
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C (1)
Derate above 25擄C
Storage Temperature Range
Symbol
VCES
VCBO
VEBO
IC
PD
Tstg
Value
60
60
4.0
2.0
35
200
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/擄C
擄C
MRF1035MB
35 W (PEAK), 960 鈥?1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332A鈥?3, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
R
胃JC
Max
5.0
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
Collector-Base Breakdown Voltage
(IC = 20 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 2.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
60
60
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mAdc, VCE = 5.0 Vdc)
hFE
10
40
100
鈥?/div>
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
(Replaces MRF1035MA/D)
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF1035MB
1
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