鈥?/div>
Gold Metallization for Improved Reliability
MRF1030
3.0 W, TO 1.0 GHz
LINEAR
UHF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating Junction Temperature
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
PD
TJ
Tstg
Value
30
60
4.0
29
0.167
200
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Watts
W/擄C
擄C
擄C
CASE 244鈥?4, STYLE 1
(.280 SOE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (TC = 70擄C)
Symbol
R
胃JC
Max
6.0
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 15 mA, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 15 mA, VBE = 0)
Collector鈥揃ase Breakdown Voltage
(IC = 15 mA, IE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 5.0 mA, IC = 0)
Collector Cutoff Current
(VCB = 25 V, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
30
60
60
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.0
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 500 mA, VCE = 5.0 V)
hFE
20
鈥?/div>
80
鈥?/div>
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz)
Cob
鈥?/div>
鈥?/div>
9.8
pF
FUNCTIONAL TESTS
Common鈥揈mitter Amplifier Power Gain
(VCE = 25 V, Pout = 3.0 W, f = 900 MHz, IC = 0.4 A)
Load Mismatch
(VCE = 25 V, IC = 0.4 A, Pout = 3.0 W, f = 900 MHz,
Load VSWR =
鈭?1,
All Phase Angles)
GPE
蠄
No Degradation in Output Power
7.5
8.5
鈥?/div>
dB
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF1030
1
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