鈥?/div>
Internal Input and Output Matching for Broadband Operation
MRF10120
120 W (PEAK), 960鈥?215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 355C鈥?2, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Peak (1)
Total Device Dissipation @ T
C
= 25擄C (1), (2)
Derate above 25擄C
Storage Temperature Range
Junction Temperature
Symbol
V
CES
V
CBO
V
EBO
I
C
P
D
T
stg
T
J
Value
55
55
3.5
15
380
2.17
鈥?5 to +200
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
R
胃JC
Max
0.46
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (I
C
= 60 mAdc, V
BE
= 0)
Collector鈥揃ase Breakdown Voltage (I
C
= 60 mAdc, I
E
= 0)
Emitter鈥揃ase Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
Collector Cutoff Current (V
CB
= 36 Vdc, I
E
= 0)
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
55
55
3.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
25
Vdc
Vdc
Vdc
mAdc
NOTES:
(continued)
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 8
1
MRF10120 產(chǎn)品屬性
0現(xiàn)貨20Factory查看交期
1 : ￥2,644.46000托盤
-
托盤
在售
NPN
55V
-
-
8.5dB
120W
20 @ 5A，5V
15A
200°C（TJ）
底座安裝
355C-02
355C-02，1 型
MRF10120相關(guān)型號(hào)PDF文件下載
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