鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C (1)
Derate above 25擄C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Symbol
R
胃JC
Value
20
50
3.5
250
7.0
40
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/擄C
擄C
MRF1002MA
MRF1002MB
2.0 W (PEAK), 960 鈥?1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332鈥?4, STYLE 1
MRF1002MA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Max
25
Unit
擄C/W
CASE 332A鈥?3, STYLE 1
MRF1002MB
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
Collector鈥揃ase Breakdown Voltage
(IC = 5.0 mAdc, IE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
20
50
50
3.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.5
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
10
鈥?/div>
100
鈥?/div>
NOTES:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF1002MA MRF1002MB
1
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