MRAL2023-6
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MRAL2023-6
is a Common
Base Device Designed for class C
Amplifier Applications in L-Band FM
Microwave Links.
PACKAGE STYLE .250 2L FLG (C)
FEATURES INCLUDE:
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Gold Metallization
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Emitter Ballasting
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Input Matching
MAXIMUM RATINGS
I
C
V
CES
P
DISS
T
J
T
STG
胃
JC
1.25 A
40 V
21 W @ T
C
= 25 擄C
-65 擄C to +200 擄C
-65 擄C to +150 擄C
8.0 擄C/W
1 = COLLECTOR
2 = BASE
3 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CES
BV
EBO
I
CBO
h
FE
C
OB
P
G
畏
C
I
C
= 50 mA
T
C
= 25 擄C
TEST CONDITIONS
I
E
= 1.0 mA
V
CB
= 22 V
V
CE
= 5.0 V
V
CB
= 22 V
V
CE
= 22 V
P
OUT
= 6.0 W
I
C
= 500 mA
f = 1.0 MHz
f = 2000 to 2300 MHz
MINIMUM TYPICAL MAXIMUM
40
3.5
1.25
10
90
10
6.8
40
UNITS
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
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NORTH HOLLYWOOD, CA 91605
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(818) 982-1200
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FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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MRAL2023-6相關型號PDF文件下載
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英文版
Advanced Semiconductor [NPN SILICON RF POWER TRANSISTOR]
ASI
-
英文版
NPN SILICON RF POWER TRANSISTOR
ASI
-
英文版
NPN SILICON RF POWER TRANSISTOR
ASI [Advan...
-
英文版
Advanced Semiconductor [NPN SILICON RF POWER TRANSISTOR]
ASI
-
英文版
NPN SILICON RF POWER TRANSISTOR
ASI
-
英文版
NPN SILICON RF POWER TRANSISTOR
ASI [Advan...
-
英文版
Advanced Semiconductor [NPN SILICON RF POWER TRANSISTOR]
ASI
-
英文版
Advanced Semiconductor [NPN SILICON RF POWER TRANSISTOR]
ASI
1
