鈥?/div>
Diffused Ballast Resistors
MRA1000-3.5L
10 dB, 1000 MHz
3.5 W
BROADBAND
UHF POWER TRANSISTOR
CASE 145D鈥?2, STYLE 1
(.380 SOE)
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating Junction Temperature
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
PD
TJ
Tstg
Value
28
50
3.5
22
0.125
200
鈥?65 to +200
Unit
Vdc
Vdc
Vdc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (TC = 70擄C)
Symbol
R
胃JC
Max
8
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (IC = 10 mA, IB = 0)
Collector鈥揈mitter Breakdown Voltage (IC = 10 mA, VBE = 0)
Collector鈥揃ase Breakdown Voltage (IC = 10 mA, IE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 5 mA, IC = 0)
Collector Cutoff Current (VCB = 30 V, IE = 0)
.
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
28
50
50
3.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
Vdc
Vdc
Vdc
Vdc
mAdc
(continued)
REV 1
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRA1000鈥?.5L
1
MRA100035L相關(guān)型號PDF文件下載
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英文版
UHF POWER TRANSISTOR
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英文版
UHF POWER TRANSISTOR
MOTOROLA [...
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英文版
Advanced Semiconductor [NPN SILICON RF POWER TRANSISTOR]
ASI
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英文版
UHF POWER TRANSISTOR
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英文版
UHF POWER TRANSISTOR
MOTOROLA [...
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英文版
UHF POWER TRANSISTOR
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英文版
UHF POWER TRANSISTOR
MOTOROLA [...
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英文版
NPN SILICON RF POWER TRANSISTOR
ASI
-
英文版
NPN SILICON RF POWER TRANSISTOR
ASI [Advan...
-
英文版
Advanced Semiconductor [NPN SILICON RF POWER TRANSISTOR]
ASI
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英文版
NPN SILICON RF POWER TRANSISTOR
ASI
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英文版
NPN SILICON RF POWER TRANSISTOR
ASI [Advan...
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