鈥?/div>
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MRA1000-14L
8.0 dB, TO 1000 MHz
14 WATTS BROADBAND
UHF POWER TRANSISTOR
CASE 145D鈥?2, STYLE 1
(.380 SOE)
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating Junction Temperature
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
PD
TJ
Tstg
Value
28
50
3.5
83
0.48
200
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (TC = 70擄C)
Symbol
R
胃JC
Max
2.1
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (IC = 25 mA, IB = 0)
Collector鈥揈mitter Breakdown Voltage (IC = 25 mA, VBE = 0)
Collector鈥揃ase Breakdown Voltage (IC = 25 mA, IE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 5.0 mA, IC = 0)
Collector Cutoff Current (VCB = 19 V, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
28
50
50
3.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
20
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 A, VCE = 5.0 V)
hFE
20
鈥?/div>
90
鈥?/div>
(continued)
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRA1000鈥?4L
1
MRA100014L相關(guān)型號PDF文件下載
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英文版
UHF POWER TRANSISTOR
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英文版
UHF POWER TRANSISTOR
MOTOROLA [...
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Advanced Semiconductor [NPN SILICON RF POWER TRANSISTOR]
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UHF POWER TRANSISTOR
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英文版
UHF POWER TRANSISTOR
MOTOROLA [...
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英文版
UHF POWER TRANSISTOR
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英文版
UHF POWER TRANSISTOR
MOTOROLA [...
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英文版
NPN SILICON RF POWER TRANSISTOR
ASI
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英文版
NPN SILICON RF POWER TRANSISTOR
ASI [Advan...
-
英文版
Advanced Semiconductor [NPN SILICON RF POWER TRANSISTOR]
ASI
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英文版
NPN SILICON RF POWER TRANSISTOR
ASI
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英文版
NPN SILICON RF POWER TRANSISTOR
ASI [Advan...
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