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MR4S08AVTS35C Datasheet

  • MR4S08AVTS35C

  • 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

  • 22頁

  • FREESCALE

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Freescale Semiconductor
Data Sheet
Document Number: MR2A16A
Rev. 4, 6/2007
256K x 16-Bit 3.3-V
Asynchronous
Magnetoresistive RAM
Introduction
The MR2A16A is a 4,194,304-bit magnetoresistive
random access memory (MRAM) device
organized as 262,144 words of 16 bits. The
MR2A16A is equipped with chip enable (E), write
enable (W), and output enable (G) pins, allowing
for significant system design flexibility without bus
contention. Because the MR2A16A has separate
byte-enable controls (LB and UB), individual bytes
can be written and read.
MRAM is a nonvolatile memory technology that
protects data in the event of power loss and does
not require periodic refreshing. The MR2A16A is
the ideal memory solution for applications that
must permanently store and retrieve critical data
quickly.
The MR2A16A is available in a 400-mil, 44-lead
plastic small-outline TSOP type-II package with an
industry-standard center power and ground SRAM
pinout.
The MR2A16A is available in Commercial (0藲C to
70藲C), Industrial (
-
40藲C to 85藲C) and Extended
(
-
40藲C to 105藲C) ambient temperature ranges.
Features
鈥?/div>
鈥?/div>
MR2A16A
44-TSOP
Case 924A-02
Single 3.3-V power supply
Commercial temperature range (0藲C to
70藲C), Industrial temperature range (
-
40藲C
to 85藲C) and Extended temperature range
(
-
40藲C to 105藲C)
Symmetrical high-speed read and write with
fast access time (35 ns)
Flexible data bus control 鈥?8 bit or 16 bit
access
Equal address and chip-enable access
times
Automatic data protection with low-voltage
inhibit circuitry to prevent writes on power
loss
All inputs and outputs are
transistor-transistor logic (TTL) compatible
Fully static operation
Full nonvolatile operation with 20 years
minimum data retention
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鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
漏 Freescale Semiconductor, Inc., 2004, 2006, 2007. All rights reserved.

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