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Freescale Semiconductor

Advance Information

MR2A16A/D

Rev. 0.1, 7/2004

256K x 16-Bit 3.3-V Asynchronous

Magnetoresistive RAM

Introduction

The MR2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as

262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output

enable (G) pins, allowing for significant system design flexibility without bus contention. Because the

MR2A16A has separate byte-enable controls (LB and UB), individual bytes can be written and read.

MRAM is a nonvolatile memory technology that protects data in the event of power loss and does not

require periodic refreshing. The MR2A16A is the ideal memory solution for applications that must

permanently store and retrieve critical data quickly.

The MR2A16A is available in a 400-mil, 44-lead plastic small-outline TSOP type-II package with an

industry-standard center power and ground SRAM pinout.

Features

鈥?/div>

Single 3.3-V power supply

Commercial temperature range (0擄C to 70擄C)

Symmetrical high-speed read and write with fast access time (25 ns)

Flexible data bus control 鈥?8 bit or 16 bit access

Equal address and chip-enable access times

Automatic data protection with low-voltage inhibit circuitry to prevent writes on power loss

All inputs and outputs are transistor-transistor logic (TTL) compatible

Fully static operation

Full nonvolatile operation with 10 years minimum data retention

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

MR2A16A Datasheet