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MPXT4100A7U Datasheet

  • MPXT4100A7U

  • X-ducer SILICON PRESSURE SENSORS

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPXT4100/D
MPXT4100
Manifold Absolute Pressure Sensors
On-Chip Signal Conditioned,
0.25 V to 4.9 V Output, Temperature
Compensated and Calibrated
The Motorola MPXT4100A/4101A/4105A series Manifold Absolute Pressure (MAP)
sensor for engine control is designed to sense absolute air pressure within the intake
manifold. This measurement can be used to compute the amount of fuel required for
each cylinder. The small form factor and high reliability of on鈥揷hip integration makes the
Motorola MAP sensor a logical and economical choice for automotive system designers.
Features
鈥?/div>
1.8% Maximum Error Over 0擄 to 85擄C
鈥?/div>
Specifically Designed for Intake Manifold Absolute Pressure Sensing in Engine
Control Systems
鈥?/div>
Ideally Suited for Microprocessor Interfacing
鈥?/div>
Patented Silicon Shear Stress Strain Gauge
鈥?/div>
Temperature Compensated Over 鈥?40擄C to +125擄C
鈥?/div>
Surface Mount Package
鈥?/div>
Ideal for Non鈥揂utomotive Applications
鈥?/div>
Also Available in Unibody Package
Application Examples
鈥?/div>
Manifold Sensing for Automotive Systems
1
BASIC ELEMENT
CASE 473A鈥?1, STYLE 2
MPXT4101
MPXT4105
SERIES
4100A: 20鈥?05 kPa
4101A: 15鈥?02 kPa
4105A: 15鈥?05 kPa
X鈥揹ucer鈩?/div>
SILICON
PRESSURE SENSORS
PIN NUMBER
Gnd
+Vout
VS
5
6
7
8
N/C
N/C
N/C
N/C
2
Value
400
1000
鈥?40 to +125
鈥?40 to +125
Unit
kPa
kPa
擄C
擄C
3
4
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Overpressure(1) (P1 > P2)
Burst Pressure(1) (P1 > P2)
Storage Temperature
Operating Temperature
VS
3
Symbol
Pmax
Pburst
Tstg
TA
*
Vout
NOTE: Pins 5, 6, 7, and 8 are not
device connections. Do not connect
to external circuitry or ground. Pin 1
is noted by the notch in the Lead.
X鈥揹ucer
SENSING
ELEMENT
THIN FILM
TEMPERATURE
COMPENSATION
AND
GAIN STAGE #1
2
GND
GAIN STAGE #2
AND
GROUND
REFERENCE
SHIFT CIRCUITRY
1
Vout
PINS 5, 6, 7 AND 8 ARE NO CONNECTS
The MPXT4100A/4101A/4105A series piezoresistive
transducer is a state鈥搊f鈥搕he鈥揳rt, monolithic, signal con-
ditioned, silicon pressure sensor. This sensor, with its pat-
ented transducer, combines advanced micromachining
techniques, thin film metallization, and bipolar semicon-
ductor processing to provide an accurate, high level analog
output signal that is proportional to applied pressure.
Figure 1 shows a block diagram of the internal circuitry
integrated on a pressure sensor chip.
Figure 1. Fully Integrated Pressure Sensor Schematic
Senseon and X鈥揹ucer are trademarks of Motorola, Inc.
Motorola Sensor Device Data
漏
Motorola, Inc. 1997
1

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