MPSW64 Datasheet

IC型號(hào)：
MPSW64
PDF描述：
One Watt Darlington Transistors
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157.31KB
PDF頁(yè)數(shù)：
4頁(yè)
芯片廠家：
MOTOROLA

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MPSW63/D

One Watt Darlington Transistors

PNP Silicon

COLLECTOR 3

MPSW63

MPSW64 *

*Motorola Preferred Device

BASE

EMITTER 1

MAXIMUM RATINGS

Rating

Collector 鈥?Emitter Voltage

Collector 鈥?Base Voltage

Emitter 鈥?Base Voltage

Collector Current 鈥?Continuous

Total Device Dissipation @ TA = 25擄C

Derate above 25擄C

Total Device Dissipation @ TC = 25擄C

Derate above 25擄C

Operating and Storage Junction

Temperature Range

Symbol

VCES

VCBO

VEBO

TJ, Tstg

MPSW63

MPSW64

鈥?0

鈥?00

1.0

8.0

2.5

鈥?55 to +150

Unit

Vdc

mAdc

Watt

mW/擄C

Watts

mW/擄C

擄C

CASE 29鈥?5, STYLE 1

TO鈥?2 (TO鈥?26AE)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Symbol

Max

125

Unit

擄C/W

ELECTRICAL CHARACTERISTICS

(TA = 25擄C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector 鈥?Emitter Breakdown Voltage

(IC = 鈥?00

碌A(chǔ)dc,

VBE = 0)

Collector Cutoff Current

(VCB = 鈥?0 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 鈥?0 Vdc, IC = 0)

V(BR)CES

ICBO

IEBO

鈥?0

鈥?/div>

鈥?00

Vdc

nAdc

Preferred

devices are Motorola recommended choices for future use and best overall value.

Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data

漏

Motorola, Inc. 1996

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