MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW45/D
One Watt Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
MPSW45
MPSW45A*
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPSW45
40
50
12
1.0
1.0
8.0
2.5
20
鈥?55 to +150
MPSW45A
50
60
12
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?5, STYLE 1
TO鈥?2 (TO鈥?26AE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 100
碌A(chǔ)dc,
VBE = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
MPSW45
MPSW45A
IEBO
V(BR)CES
MPSW45
MPSW45A
V(BR)CBO
MPSW45
MPSW45A
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
100
100
100
nAdc
50
60
12
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
nAdc
40
50
鈥?/div>
鈥?/div>
Vdc
Vdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
MPSW45 產(chǎn)品屬性
5,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN - 達(dá)林頓
1A
40V
1.5V @ 2mA，1A
-
25000 @ 200mA，5V
1W
100MHz
通孔
TO-226-3、TO-92-3 長體
TO-92
散裝
MPSW45OS
MPSW45相關(guān)型號(hào)PDF文件下載
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