MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW13/D
One Watt Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
MPSW13
MPSW14
EMITTER 1
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
30
30
10
1.0
1.0
8.0
2.5
20
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?5, STYLE 1
TO鈥?2 (TO鈥?26AE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 100
碌Adc,
VBE = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
V(BR)CES
ICBO
IEBO
30
鈥?/div>
鈥?/div>
鈥?/div>
100
100
Vdc
nAdc
nAdc
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
1
2
3
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