MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW01/D
One Watt High Current Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPSW01
MPSW01A*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
MPSW01
MPSW01A
Collector 鈥?Base Voltage
MPSW01
MPSW01A
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
VEBO
IC
PD
PD
TJ, Tstg
Symbol
VCEO
30
40
VCBO
40
50
5.0
1000
1.0
8.0
2.5
20
鈥?55 to +150
Vdc
mAdc
Watts
mW/擄C
Watts
mW/擄C
擄C
Vdc
Value
Unit
Vdc
1
2
3
CASE 29鈥?5, STYLE 1
TO鈥?2 (TO鈥?26AE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
碌A(chǔ)dc,
IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
MPSW01
MPSW01A
IEBO
V(BR)CEO
MPSW01
MPSW01A
V(BR)CBO
MPSW01
MPSW01A
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
0.1
0.1
0.1
碌A(chǔ)dc
40
50
5.0
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
碌A(chǔ)dc
30
40
鈥?/div>
鈥?/div>
Vdc
Vdc
v
300
m
s, Duty Cycle
v
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
MPSW01 產(chǎn)品屬性
1,500
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
1A
30V
500mV @ 100mA，1A
-
60 @ 100mA，1V
1W
50MHz
通孔
TO-226-3、TO-92-3 長體
TO-226
散裝
MPSW01FS
MPSW01相關(guān)型號PDF文件下載
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