MPSH81 / MMBTH81
MPSH81
MMBTH81
C
E
C
E
TO-92
B
SOT-23
Mark: 3D
B
PNP RF Transistor
This device is designed for general RF amplifier and mixer
applications to 250 mHz with collector currents in the 1.0 mA
to 30 mA range. Sourced from Process 75.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25擄C unless otherwise noted
Parameter
Value
20
20
3.0
50
-55 to +150
Units
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MPSH81
350
2.8
125
357
Max
*MMBTH81
225
1.8
556
Units
mW
mW/擄C
擄C/W
擄C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
錚?997
Fairchild Semiconductor Corporation