MPSH34
MPSH34
NPN General Purpose Amplifier
鈥?This device is designed for common-emitter low noise
amplifier and mixer applications with collector currents
in the 100mA to 20mA range to 300MHz, and low
frequency drift common-base VHF oscillator
applications with high output levels for driving FET
mixers.
鈥?Sourced from process 47.
鈥?See MPSH11 for characteristics.
1
TO-92
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Parameter
Value
40
40
4.0
50
-55 ~ +150
Units
V
V
V
mA
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 1.0mA, I
B
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 30V, I
E
= 0
V
CE
= 2.0V, I
C
= 20mA
V
CE
= 15V, I
C
= 7.0mA
I
C
= 7.0mA, I
B
= 2.0mA
V
CE
= 15V, I
C
= 7.0mA
I
C
=15mA, V
CE
= 15V,
f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1.0MHz
500
0.32
15
40
0.5
0.95
V
V
MHz
pF
Min.
40
40
4.0
50
VV
nA
Max.
Units
V
Off Characteristics
V
(BR)CEO
Collector-Emitter Sustaining Voltage *
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE(on)
f
T
C
cb
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Base Capacitance
On Characteristics
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Max.
625
5.0
83.3
200
Units
mW
mW/擄C
擄C/W
擄C/W
漏2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
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