MPSH24 / MMBTH24
Discrete POWER & Signal
Technologies
MPSH24
MMBTH24
C
E
C
BE
TO-92
SOT-23
Mark: 3A
B
NPN RF Transistor
This device is designed for common-emitter low noise
amplifier and mixer applications with collector currents
in the 100
碌A(chǔ)
to 20 mA range to 300 MHz, and low
frequency drift common-base VHF oscillator applications
with high output levels for driving FET mixers. Sourced
from Process 47. See MPSH11 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25擄C unless otherwise noted
Parameter
Value
30
40
4.0
50
-55 to +150
Units
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
P
D
R
胃
JC
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MPSH24
625
5.0
83.3
200
Max
*MMBTH24
225
1.8
556
Units
mW
mW/擄C
擄C/W
擄C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
漏1997
Fairchild Semiconductor Corporation
1
2
