MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
VHF/UHF Transistors
Order this document
by MPSH10/D
NPN Silicon
COLLECTOR
3
1
BASE
2
EMITTER
MPSH10
MPSH11
Motorola Preferred Devices
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
PD
PD
TJ, Tstg
Value
25
30
3.0
350
2.8
1.0
8.0
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mW
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 2
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
25
30
3.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
100
Vdc
Vdc
Vdc
nAdc
nAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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英文版
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