NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 4 聳 FEB 94
FEATURES
* High f
T
=650MHz min
* Max. capacitance 0.7pF
* Low noise <5dB at 500MHz
APPLICATIONS
* Keyless entry systems
* Wideband instrumentation amplifiers
* Telemetry
* Wireless lans
MPSH10P
C
E
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
30
25
3
25
500
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
mW
擄C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Collector Base Capacitance
Collector Base Time
Constant
Common-Base Feedback
capacitance
Noise Figure
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
f
T
C
cb
r
b
C
c
C
rb
N
f
60
650
0.7
9
0.65
5
MHz
pF
ps
pF
dB
MIN.
30
25
3
100
100
0.5
0.95
MAX.
UNIT
V
V
V
nA
nA
V
V
CONDITIONS.
I
C
=100
碌
A, I
E
=0
I
C
=1mA, I
B
=0*
I
E
=10
碌
A, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=2V,I
C
=0
I
C
=4mA, I
B
=0.4mA
IC=4mA, V
CE
=10V
I
C
=4mA, V
CE
=10V*
I
C
=4mA, V
CE
=10V f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CB
=10V, I
C
=4mA,
f=31.8MHz
V
CB
=10V, I
E
=0, f=1MHz
I
C
=2mA, V
CE
=5V,
R
S
=50
鈩?
f=500MHz
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
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