DC COMPONENTS CO., LTD.
R
MPSA92M
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use as a video output to drive color
CRT, or as a dialer circuit in electronic telephone.
TO-92
Pinning
1 = Emitter
2 = Base
3 = Collector
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
o
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
-300
-300
-5
-800
625
+150
-55 to +150
Unit
V
V
V
mA
mW
o
o
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
3 2 1
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
h
FE1
h
FE2
h
FE3
f
T
380碌s, Duty Cycle
Min
-300
-300
-5
-
-
-
-
-
-
80
80
40
50
2%
Typ
-
-
-
-
-
-0.15
-
-
-
-
-
-
-
Max
-
-
-
-5
-0.1
-
-0.7
-0.9
-1
-
-
-
-
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
V
V
-
-
-
MHz
Test Conditions
I
C
=-100碌A(chǔ), I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10碌A(chǔ), I
C
=0
V
CE
=-300V, I
B
=0
V
EB
=-3V, I
C
=0
I
C
=-30mA, I
B
=-1mA
I
C
=-100mA, I
B
=-10mA
I
C
=-20mA, I
B
=-2mA
I
C
=-100mA, I
B
=-10mA
I
C
=-10mA, V
CE
=-10V
I
C
=-100mA, V
CE
=-10V
I
C
=-200mA, V
CE
=-10V
I
C
=-10mA, V
CE
=-20V, f=100MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
(1)
DC Current Gain
(1)
Transition Frequency
(1)Pulse Test: Pulse Width
1
