PNP SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 1 聳 JUNE 94
FEATURES
* 60 Volt V
CEO
* Gain of 10k at I
C
=100mA
MPSA77P
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
-60
-60
-10
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
mW
擄C
-500
625
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
On Voltage
Base-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(on)
10k
10k
MIN.
-60
-60
-10
-100
-500
-100
-1.5
-2
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
CONDITIONS.
I
C
=-100
碌
A, I
E
=0
I
C
=-100
碌
A, I
B
=0*
I
E
=-10
碌
A, I
C
=0
V
CB
=-50V, I
E
=0
V
CE
=-50V
V
EB
=-10V, I
C
=0
I
C
=-100mA, I
B
=-0.1mA*
I
C
=-100mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=5V*
Static Forward Current h
FE
Transfer Ratio
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
